A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test

Sean P. Ogden, Juan Borja, Huawei Zhou, Joel L. Plawsky, Toh Ming Lu, William N. Gill

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Multiple I-V Ramp Test is designed to stress low-k SiCOH-based dielectrics that have absorbed moisture. Two conduction regimes are found based on the total injected fluence into the dielectric films and the concentration of water in the dielectric. The dielectric under stress is either characterized by electron trapping, or the generation of traps and/or interface states. A mechanism for moisture-related breakdown is proposed that is consistent with results from previous works on water-diffused silicon dioxide films.

Original languageEnglish
Title of host publication2015 IEEE International Reliability Physics Symposium, IRPS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesBD41-BD46
ISBN (Electronic)9781467373623
DOIs
StatePublished - 26 May 2015
Externally publishedYes
EventIEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
Duration: 19 Apr 201523 Apr 2015

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2015-May
ISSN (Print)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
Country/TerritoryUnited States
CityMonterey
Period19/04/1523/04/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

  • breakdown
  • hydrogen
  • moisture
  • voltage ramp

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