A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test

Sean P. Ogden; Juan Borja; Huawei Zhou; Joel L. Plawsky; Toh Ming Lu; William N. Gill

doi:10.1109/IRPS.2015.7112776

A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test

Sean P. Ogden, Juan Borja, Huawei Zhou, Joel L. Plawsky, Toh Ming Lu, William N. Gill

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A Multiple I-V Ramp Test is designed to stress low-k SiCOH-based dielectrics that have absorbed moisture. Two conduction regimes are found based on the total injected fluence into the dielectric films and the concentration of water in the dielectric. The dielectric under stress is either characterized by electron trapping, or the generation of traps and/or interface states. A mechanism for moisture-related breakdown is proposed that is consistent with results from previous works on water-diffused silicon dioxide films.

Original language	English
Title of host publication	2015 IEEE International Reliability Physics Symposium, IRPS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	BD41-BD46
ISBN (Electronic)	9781467373623
DOIs	https://doi.org/10.1109/IRPS.2015.7112776
State	Published - 26 May 2015
Externally published	Yes
Event	IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: 19 Apr 2015 → 23 Apr 2015

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2015-May
ISSN (Print)	1541-7026

Conference

Conference	IEEE International Reliability Physics Symposium, IRPS 2015
Country/Territory	United States
City	Monterey
Period	19/04/15 → 23/04/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

breakdown
hydrogen
moisture
voltage ramp

Access to Document

10.1109/IRPS.2015.7112776

Cite this

Ogden, S. P., Borja, J., Zhou, H., Plawsky, J. L., Lu, T. M., & Gill, W. N. (2015). A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015 (pp. BD41-BD46). [7112776] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2015.7112776

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abstract = "A Multiple I-V Ramp Test is designed to stress low-k SiCOH-based dielectrics that have absorbed moisture. Two conduction regimes are found based on the total injected fluence into the dielectric films and the concentration of water in the dielectric. The dielectric under stress is either characterized by electron trapping, or the generation of traps and/or interface states. A mechanism for moisture-related breakdown is proposed that is consistent with results from previous works on water-diffused silicon dioxide films.",

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Ogden, SP, Borja, J, Zhou, H, Plawsky, JL, Lu, TM & Gill, WN 2015, A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test. in 2015 IEEE International Reliability Physics Symposium, IRPS 2015., 7112776, IEEE International Reliability Physics Symposium Proceedings, vol. 2015-May, Institute of Electrical and Electronics Engineers Inc., pp. BD41-BD46, IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, United States, 19/04/15. https://doi.org/10.1109/IRPS.2015.7112776

A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test. / Ogden, Sean P.; Borja, Juan; Zhou, Huawei et al.

2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. BD41-BD46 7112776 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A Multiple I-V Ramp Test is designed to stress low-k SiCOH-based dielectrics that have absorbed moisture. Two conduction regimes are found based on the total injected fluence into the dielectric films and the concentration of water in the dielectric. The dielectric under stress is either characterized by electron trapping, or the generation of traps and/or interface states. A mechanism for moisture-related breakdown is proposed that is consistent with results from previous works on water-diffused silicon dioxide films.

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Ogden SP, Borja J, Zhou H, Plawsky JL, Lu TM, Gill WN. A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. BD41-BD46. 7112776. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2015.7112776

A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test

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