Dielectric Breakdown in Copper Interconnects

Juan Pablo Borja; Toh Ming Lu; Joel Plawsky

doi:10.1007/978-3-319-43220-5_8

Dielectric Breakdown in Copper Interconnects

Juan Pablo Borja, Toh Ming Lu, Joel Plawsky

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

The theory introduced in Chap. 7 was primarily applied to scenarios involving intrinsic failure. The model was used to describe the dynamics of dielectric breakdown as caused by the transport of charge carriers and the formation of traps. In this chapter, the role of Cu and ionic species on catalyzing dielectric failure is explored and integrated into the theory. Experimental evidence demonstrating the presence and transport of ions is discussed. Ultimately, a complete depiction of dielectric breakdown as caused by the complex interplay between charged species is presented.

Original language	English
Title of host publication	SpringerBriefs in Materials
Publisher	Springer
Pages	93-98
Number of pages	6
DOIs	https://doi.org/10.1007/978-3-319-43220-5_8
State	Published - 2016
Externally published	Yes

Publication series

Name	SpringerBriefs in Materials
ISSN (Print)	2192-1091
ISSN (Electronic)	2192-1105

Bibliographical note

Publisher Copyright:
© 2016, The Author(s).

Keywords

Amorphous film
Charge transport
Dielectric breakdown
Electron
Mechanism
Metal ion
Model
Traps

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10.1007/978-3-319-43220-5_8

Cite this

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KW - Charge transport

KW - Dielectric breakdown

KW - Electron

KW - Mechanism

KW - Metal ion

KW - Model

KW - Traps

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PB - Springer

ER -

Dielectric Breakdown in Copper Interconnects

Abstract

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Keywords

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