Dielectric Breakdown in Copper Interconnects

Juan Pablo Borja, Toh Ming Lu, Joel Plawsky

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

The theory introduced in Chap. 7 was primarily applied to scenarios involving intrinsic failure. The model was used to describe the dynamics of dielectric breakdown as caused by the transport of charge carriers and the formation of traps. In this chapter, the role of Cu and ionic species on catalyzing dielectric failure is explored and integrated into the theory. Experimental evidence demonstrating the presence and transport of ions is discussed. Ultimately, a complete depiction of dielectric breakdown as caused by the complex interplay between charged species is presented.

Original languageEnglish
Title of host publicationSpringerBriefs in Materials
PublisherSpringer
Pages93-98
Number of pages6
DOIs
StatePublished - 2016
Externally publishedYes

Publication series

NameSpringerBriefs in Materials
ISSN (Print)2192-1091
ISSN (Electronic)2192-1105

Bibliographical note

Publisher Copyright:
© 2016, The Author(s).

Keywords

  • Amorphous film
  • Charge transport
  • Dielectric breakdown
  • Electron
  • Mechanism
  • Metal ion
  • Model
  • Traps

Fingerprint

Dive into the research topics of 'Dielectric Breakdown in Copper Interconnects'. Together they form a unique fingerprint.

Cite this