General Theories

Juan Pablo Borja, Toh Ming Lu, Joel Plawsky

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

In this section, we present a general survey of the theories and models that have been used to describe dielectric breakdown in amorphous thin films. The fundamental concepts for each theory are presented as initially proposed by the authors. Some of the models explained in this section include the E, 1/E, E, power-law, and the metal-catalyzed failure model. Commentary on the limitations for each model is provided. In the latter part of this chapter, we will discuss the most recent models for describing reliability trends in contemporary interconnect structures that employ low-κ nano-porous films. A general comparison between model predictions at low field is presented.

Original languageEnglish
Title of host publicationSpringerBriefs in Materials
PublisherSpringer
Pages11-19
Number of pages9
DOIs
StatePublished - 2016
Externally publishedYes

Publication series

NameSpringerBriefs in Materials
ISSN (Print)2192-1091
ISSN (Electronic)2192-1105

Bibliographical note

Publisher Copyright:
© 2016, The Author(s).

Keywords

  • Dielectric breakdown
  • Failure mechanisms
  • Field acceleration
  • Holes
  • Ions
  • Models
  • Reliability
  • Traps
  • Tunneling

Fingerprint

Dive into the research topics of 'General Theories'. Together they form a unique fingerprint.

Cite this