General Theories

Juan Pablo Borja; Toh Ming Lu; Joel Plawsky

doi:10.1007/978-3-319-43220-5_2

General Theories

Juan Pablo Borja, Toh Ming Lu, Joel Plawsky

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

In this section, we present a general survey of the theories and models that have been used to describe dielectric breakdown in amorphous thin films. The fundamental concepts for each theory are presented as initially proposed by the authors. Some of the models explained in this section include the E, 1/E, E, power-law, and the metal-catalyzed failure model. Commentary on the limitations for each model is provided. In the latter part of this chapter, we will discuss the most recent models for describing reliability trends in contemporary interconnect structures that employ low-κ nano-porous films. A general comparison between model predictions at low field is presented.

Original language	English
Title of host publication	SpringerBriefs in Materials
Publisher	Springer
Pages	11-19
Number of pages	9
DOIs	https://doi.org/10.1007/978-3-319-43220-5_2
State	Published - 2016
Externally published	Yes

Publication series

Name	SpringerBriefs in Materials
ISSN (Print)	2192-1091
ISSN (Electronic)	2192-1105

Bibliographical note

Publisher Copyright:
© 2016, The Author(s).

Keywords

Dielectric breakdown
Failure mechanisms
Field acceleration
Holes
Ions
Models
Reliability
Traps
Tunneling

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10.1007/978-3-319-43220-5_2

Cite this

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AU - Lu, Toh Ming

AU - Plawsky, Joel

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KW - Failure mechanisms

KW - Field acceleration

KW - Holes

KW - Ions

KW - Models

KW - Reliability

KW - Traps

KW - Tunneling

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T3 - SpringerBriefs in Materials

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General Theories

Abstract

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Keywords

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