Thermoluminescence and defect centers in synthetic diopside

Nilo F. Cano, T. K. Gundu Rao, Carlos D. Gonzales-Lorenzo, Jorge Sabino Ayala Arenas, Henry S. Javier-Ccallata, Shigueo Watanabe

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

MgCaSi 2 O 6 polycrystal was synthesized by the devitrification method. The dosimetric characteristics by TL of this prepared polycrystal was investigated. This material exhibits TL peaks at 115, 160, 210, 260 and 280 °C. The dosimetric peak occurs at 260 °C with a well defined glow curve structure. This peak shows a linear dose response. Electron paramagnetic resonance (EPR) studies have been carried out to identify the defect centers responsible for the TL peaks. Two defect centers in the region of g = 2.0 are found. One of the centers (center I) with a g factor equal to 2.0085 is identified as O -ion and relates with the observed high temperature 250 and 300 °C TL peaks. Additional defect centers with g = 2.0012 (center II) and 1.982 (center III) are due to F + -centers (electron trapped at an oxygen vacancy). Center II and III correlate with the TL peaks at 160 °C and 106 °C, respectively.

Original languageEnglish
Pages (from-to)314-319
Number of pages6
JournalJournal of Luminescence
Volume211
DOIs
StatePublished - Jul 2019

Bibliographical note

Funding Information:
The authors wish to thank Ms. E. Somessari of the Institute for Energy and Nuclear Researches (IPEN), Brazil, for kindly carrying out the irradiation of the samples. This work was carried out with partial financial support from Fundação de Amparo à Pesquisa do Estado de São Paulo - FAPESP, Brazil (Process number 2014/03085-0 ).

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

  • Defect centers
  • Diopside polycrystal
  • EPR
  • TL

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