Carbon doping of cubic GaN under gallium-rich growth conditions

D. J. As, David Gregorio Pacheco Salazar, S. Potthast, K. Lischka

Resultado de la investigación: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

Successful p-type doping of cubic GaN by carbon grown under Ga-rich conditions is reported with maximum hole concentration of 6 × 10 18 cm-3 and hole mobility of 19 cm2/Vs at room temperature, respectively. Cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) on a semiinsulating GaAs (001) substrate (3 inches wafer). C-doping of the c-GaN was achieved by e-beam evaporation of a graphite rode with an C-flux of 1 × 1012 cm-2 s-1. Optical microscopy, Hall-effect measurements and room temperature photoluminescence were used for the investigation of the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under Ga-rich growth conditions.

Idioma originalInglés
Páginas (desde-hasta)2537-2540
Número de páginas4
PublicaciónPhysica Status Solidi C: Conferences
N.º7
DOI
EstadoPublicada - 2003
Publicado de forma externa
Evento5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japón
Duración: 25 may. 200330 may. 2003

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