Growth and characterization of cubic InxGa1- xN epilayers on two different types of substrate

David Gregorio Pacheco Salazar, S. F. Li, F. Cerdeira, E. A. Meneses, J. R. Leite, L. M.R. Scolfaro, D. J. As, K. Lischka

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

13 Citas (Scopus)

Resumen

We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC substrates are more uniformly strained and have better crystallinity than those deposited on GaAs substrates.

Idioma originalInglés
Páginas (desde-hasta)379-387
Número de páginas9
PublicaciónJournal of Crystal Growth
Volumen284
N.º3-4
DOI
EstadoPublicada - 1 nov. 2005
Publicado de forma externa

Nota bibliográfica

Funding Information:
The authors are thankful to Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP, Brazil) and Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq-Brazil) for funding in the form of research grants and fellowships. Financial support is gratefully acknowledged to Deutsche Forschungsgemeinschaft (DFG) and the German-Brazilian academic exchange program of DAAD-PROBRAL. Finally we would like to thank Dr. H. Nagasawa and Dr. M. Abe for supplying the 3C-SiC substrates.

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