Growth and characterization of cubic InxGa1- xN epilayers on two different types of substrate

David Gregorio Pacheco Salazar; S. F. Li; F. Cerdeira; E. A. Meneses; J. R. Leite; L. M.R. Scolfaro; D. J. As; K. Lischka

doi:10.1016/j.jcrysgro.2005.07.049

Growth and characterization of cubic In_xGa_1- _xN epilayers on two different types of substrate

David Gregorio Pacheco Salazar, S. F. Li, F. Cerdeira, E. A. Meneses, J. R. Leite, L. M.R. Scolfaro, D. J. As, K. Lischka

Resultado de la investigación: Contribución a una revista › Artículo › revisión exhaustiva

13 Citas (Scopus)

Resumen

We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC substrates are more uniformly strained and have better crystallinity than those deposited on GaAs substrates.

Idioma original	Inglés
Páginas (desde-hasta)	379-387
Número de páginas	9
Publicación	Journal of Crystal Growth
Volumen	284
N.º	3-4
DOI	https://doi.org/10.1016/j.jcrysgro.2005.07.049
Estado	Publicada - 1 nov. 2005
Publicado de forma externa	Sí

Nota bibliográfica

Funding Information:
The authors are thankful to Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP, Brazil) and Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq-Brazil) for funding in the form of research grants and fellowships. Financial support is gratefully acknowledged to Deutsche Forschungsgemeinschaft (DFG) and the German-Brazilian academic exchange program of DAAD-PROBRAL. Finally we would like to thank Dr. H. Nagasawa and Dr. M. Abe for supplying the 3C-SiC substrates.

Acceder al documento

10.1016/j.jcrysgro.2005.07.049

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@article{0b82918b2ed449c9a952355daeeb0eb2,

title = "Growth and characterization of cubic InxGa1- xN epilayers on two different types of substrate",

abstract = "We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC substrates are more uniformly strained and have better crystallinity than those deposited on GaAs substrates.",

keywords = "A1. Crystalline quality, A1. Raman scattering, A1. X-ray diffraction",

author = "{Pacheco Salazar}, {David Gregorio} and Li, {S. F.} and F. Cerdeira and Meneses, {E. A.} and Leite, {J. R.} and Scolfaro, {L. M.R.} and As, {D. J.} and K. Lischka",

note = "Funding Information: The authors are thankful to Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado de S{\~a}o Paulo (FAPESP, Brazil) and Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico (CNPq-Brazil) for funding in the form of research grants and fellowships. Financial support is gratefully acknowledged to Deutsche Forschungsgemeinschaft (DFG) and the German-Brazilian academic exchange program of DAAD-PROBRAL. Finally we would like to thank Dr. H. Nagasawa and Dr. M. Abe for supplying the 3C-SiC substrates.",

year = "2005",

month = nov,

day = "1",

doi = "10.1016/j.jcrysgro.2005.07.049",

language = "Ingl{\'e}s",

volume = "284",

pages = "379--387",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Growth and characterization of cubic InxGa1- xN epilayers on two different types of substrate

AU - Pacheco Salazar, David Gregorio

AU - Li, S. F.

AU - Cerdeira, F.

AU - Meneses, E. A.

AU - Leite, J. R.

AU - Scolfaro, L. M.R.

AU - As, D. J.

AU - Lischka, K.

N1 - Funding Information: The authors are thankful to Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP, Brazil) and Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq-Brazil) for funding in the form of research grants and fellowships. Financial support is gratefully acknowledged to Deutsche Forschungsgemeinschaft (DFG) and the German-Brazilian academic exchange program of DAAD-PROBRAL. Finally we would like to thank Dr. H. Nagasawa and Dr. M. Abe for supplying the 3C-SiC substrates.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC substrates are more uniformly strained and have better crystallinity than those deposited on GaAs substrates.

AB - We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC substrates are more uniformly strained and have better crystallinity than those deposited on GaAs substrates.

KW - A1. Crystalline quality

KW - A1. Raman scattering

KW - A1. X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=26044482681&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.07.049

DO - 10.1016/j.jcrysgro.2005.07.049

M3 - Artículo

AN - SCOPUS:26044482681

VL - 284

SP - 379

EP - 387

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -