Near band-edge optical properties of cubic GaN with and without carbon doping

J. R.L. Fernandez; F. Cerdeira; E. A. Meneses; J. A.N.T. Soares; O. C. Noriega; J. R. Leite; D. J. As; U. Köhler; David Gregorio Pacheco Salazar; D. Schikora; K. Lischka

doi:10.1016/S0026-2692(03)00226-X

Near band-edge optical properties of cubic GaN with and without carbon doping

J. R.L. Fernandez, F. Cerdeira, E. A. Meneses, J. A.N.T. Soares, O. C. Noriega, J. R. Leite, D. J. As, U. Köhler, David Gregorio Pacheco Salazar, D. Schikora, K. Lischka

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7 Citas (Scopus)

Resumen

We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models.

Idioma original	Inglés
Páginas (desde-hasta)	73-77
Número de páginas	5
Publicación	Microelectronics Journal
Volumen	35
N.º	1
DOI	https://doi.org/10.1016/S0026-2692(03)00226-X
Estado	Publicada - ene. 2004
Publicado de forma externa	Sí

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Funding Information:
Financial support from the Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), both in the form of research grants (01/01067-4 and 98/12779-0) and of postdoctoral fellowships for some of the authors (J.R.L.F. and J.A.N.T.S.) is gratefully acknowledged. Funding from the Deutsche Forschungsgemeinschaft (DFG) is also acknowledged.

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title = "Near band-edge optical properties of cubic GaN with and without carbon doping",

abstract = "We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models.",

keywords = "Carbon doping, Photoluminescence, Photoluminescence excitation",

author = "Fernandez, {J. R.L.} and F. Cerdeira and Meneses, {E. A.} and Soares, {J. A.N.T.} and Noriega, {O. C.} and Leite, {J. R.} and As, {D. J.} and U. K{\"o}hler and {Pacheco Salazar}, {David Gregorio} and D. Schikora and K. Lischka",

note = "Funding Information: Financial support from the Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado de S{\~a}o Paulo (FAPESP), both in the form of research grants (01/01067-4 and 98/12779-0) and of postdoctoral fellowships for some of the authors (J.R.L.F. and J.A.N.T.S.) is gratefully acknowledged. Funding from the Deutsche Forschungsgemeinschaft (DFG) is also acknowledged.",

year = "2004",

month = jan,

doi = "10.1016/S0026-2692(03)00226-X",

language = "Ingl{\'e}s",

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T1 - Near band-edge optical properties of cubic GaN with and without carbon doping

AU - Fernandez, J. R.L.

AU - Cerdeira, F.

AU - Meneses, E. A.

AU - Soares, J. A.N.T.

AU - Noriega, O. C.

AU - Leite, J. R.

AU - As, D. J.

AU - Köhler, U.

AU - Pacheco Salazar, David Gregorio

AU - Schikora, D.

AU - Lischka, K.

N1 - Funding Information: Financial support from the Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), both in the form of research grants (01/01067-4 and 98/12779-0) and of postdoctoral fellowships for some of the authors (J.R.L.F. and J.A.N.T.S.) is gratefully acknowledged. Funding from the Deutsche Forschungsgemeinschaft (DFG) is also acknowledged.

PY - 2004/1

Y1 - 2004/1

N2 - We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models.

AB - We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models.

KW - Carbon doping

KW - Photoluminescence

KW - Photoluminescence excitation

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U2 - 10.1016/S0026-2692(03)00226-X

DO - 10.1016/S0026-2692(03)00226-X

M3 - Artículo

AN - SCOPUS:0242691811

VL - 35

SP - 73

EP - 77

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 1

ER -

Near band-edge optical properties of cubic GaN with and without carbon doping

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