On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields

Juan Borja, Joel L. Plawsky, T. M. Lu, William N. Gill

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

Resumen

Cu injection into low-k dielectrics was studied using oscillating bipolar field experiments coupled with a mass transport model. Cu/SiCOH/Si structures were stressed using an oscillating square bipolar applied field at 200 °C. Breakdown was defined experimentally as the time it takes for the leakage current to exceed 1 × 10-5 A under given stress conditions. Time to failure was found to depend on field oscillating frequency and amplitude of the applied field. It was determined that ion solubility primarily affects the magnitude of lifetime enhancement, while mobility affects its onset in the frequency domain. Overtime, the local field generated by the accumulation of Cu ions during bias temperature stress resists the action of the oscillating field thus inhibiting the ability to sweep ions from cathode to anode through reversal of the applied field and thereby limits the observed lifetime enhancement. Predictions from the model match trends for experimental data involving transport of Cu ions into SiCOH.

Idioma originalInglés
Número de artículo034104
PublicaciónJournal of Applied Physics
Volumen113
N.º3
DOI
EstadoPublicada - 21 ene. 2013
Publicado de forma externa

Nota bibliográfica

Funding Information:
We acknowledge Semiconductor Research Corporation and RPI for funding this work. We also thank Dr. Jeff Bielefeld from Intel for providing the dielectric samples used in this testing.

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